Samsung Develops Industry's First DDR4 DRAM, Using 30nm Class Technology
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it completed development of the industry's first DDR4 DRAM module last month, using 30 nanometer (nm) class process technology.
The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class* process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.
By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today's typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.